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IRFIB6N60APBF

更新时间： 2024-09-16 03:20:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
9页	220K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFIB6N60APBF 数据手册

PD - 94838

SMPS MOSFET

IRFIB6N60APbF

HEXFET^®Power MOSFET

Applications

V_DSS

600V

Rds(on) max

I_D

5.5A

l Switch Mode Power Supply ( SMPS )

l Uninterruptable Power Supply

l High speed power switching

l High Voltage Isolation = 2.5KVRMS

l Lead-Free

0.75Ω

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

G D S

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.5

3.5

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.48

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Typical SMPS Topologies:

l Single Transistor Forward

l Active Clamped Forward

Notes through are on page 8

www.irf.com

11/13/03

12 3 4 5 6 7...9

中文翻译

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