IRFIB5N65

更新时间： 2024-11-05 22:27:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	105K
描述
Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=5.1A)

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中文翻译

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数据手册

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IRFIB5N65 数据手册

PD-91816B

SMPS MOSFET

IRFIB5N65A

HEXFET^®Power MOSFET

Applications

l Switch Mode Power Supply (SMPS)

V_DSS

R_DS(on)max

I_D

650V

0.93Ω

5.1A

l Uninterruptible Power Supply

l High Speed Power Switching

l High Voltage Isolation = 2.5KVRMS

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

G D S

TO-220 Full-Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

_D@ T_C= 100°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.1

3.2

I_DM

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.48

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

2.8

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Typical SMPS Topologies

l Single Transistor Flyback

l Single Transistor Forward

Notes through are on page 8

www.irf.com

6/21/00

12 3 4 5 6 7 8

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与IRFIB5N65相关器件

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IRFIB5N65A	INFINEON	获取价格	Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=5.1A)
IRFIB5N65A	VISHAY	获取价格	Power MOSFET
IRFIB5N65APBF	INFINEON	获取价格	SMPS MOSFET
IRFIB6N60A	INFINEON	获取价格	Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A)
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IRFIB7N50A	VISHAY	获取价格	Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Me
IRFIB7N50A	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
IRFIB7N50A-031	VISHAY	获取价格	Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Me
IRFIB7N50A-107	VISHAY	获取价格	Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Me