Datasheet > IRFF430

IRFF430

更新时间： 2024-09-08 22:31:27

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	327K
描述
2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET

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替代型号

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IRFF430 数据手册

IRFF430

Data Sheet

March 1999

File Number 1894.4

2.75A, 500V, 1.500 Ohm, N-Channel

Power MOSFET

Features

• 2.75A, 500V

• r = 1.500Ω

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17415.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRFF430

TO-205AF

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-205AF

SOURCE

DRAIN

(CASE)

GATE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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IRFF430 替代型号

型号	品牌	替代类型	描述	数据表
2N6802	INFINEON	功能相似	500V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6802 with Hermetic Packagi
IRFF430	SEME-LAB	功能相似	NâCHANNEL ENHANCEMENT
IRFF430	INFINEON	功能相似	HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

与IRFF430相关器件

型号	品牌	获取价格	描述	数据表
IRFF430PBF	INFINEON	获取价格	2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3
IRFF430R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.75A I(D) \| TO-205AF
IRFF430SCX	INFINEON	获取价格	500V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - Screening Level TX
IRFF431	INFINEON	获取价格	Power Field-Effect Transistor, 2.8A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRFF431	ROCHESTER	获取价格	2.8A, 450V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF431R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 2.75A I(D) \| TO-205AF
IRFF432	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.25A I(D) \| TO-205AF
IRFF432R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.25A I(D) \| TO-205AF
IRFF433	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 2.25A I(D) \| TO-205AF
IRFF433R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 2.25A I(D) \| TO-205AF