Datasheet > IRFF120

IRFF120

更新时间： 2024-01-12 12:48:21

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页数	文件大小	规格书
7页	134K
描述
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

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IRFF120 技术参数

IRFF120

Foot Notes:

➀➀ I

≤ 6.0A, di/dt ≤ 110A/µs,

≤ 100V, T ≤ 150°C

➀➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

Suggested RG =7.5 Ω

➀➀➀V

= 25V, starting T = 25°C,

➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Peak I = 6.0A,

Case Outline and Dimensions —TO-205AF

LEGEND

1- SOURCE

2- GATE

3- DRAIN

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Data and specifications subject to change without notice. 01/01

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型号	品牌	描述	获取价格	数据表
IRFF120R	ETC	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-205AF	获取价格
IRFF121	GE	N-Channel Enhancement-Mode Power MOS Field-Effect Transistors	获取价格
IRFF121	ROCHESTER	6A, 80V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF	获取价格
IRFF121R	ETC	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 6A I(D) \| TO-205AF	获取价格
IRFF122	GE	N-Channel Enhancement-Mode Power MOS Field-Effect Transistors	获取价格
IRFF122	VISHAY	Power Field-Effect Transistor, 5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal	获取价格