生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205 | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFF122R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF | |
IRFF123 | GE |
获取价格 |
N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | |
IRFF123 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 60V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal- | |
IRFF123R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF | |
IRFF130 | SEME-LAB |
获取价格 |
N-Channel MOSFET in a Hermetically sealed TO39 | |
IRFF130 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFF130 | INTERSIL |
获取价格 |
8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET | |
IRFF130 | GE |
获取价格 |
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | |
IRFF130 | NJSEMI |
获取价格 |
Trans MOSFET N-CH 100V 8A 3-Pin TO-39 | |
IRFF130 | INFINEON |
获取价格 |
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A IRFF130 with Hermetic Packag |