Datasheet > IRFB4615

IRFB4615

更新时间： 2023-12-06 20:10:54

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	302K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFB4615 数据手册

IRFB4615PbF

6.0

5.5

5.0

4.5

4.0

3.5

I = 14A

= 100V

T = 25°C

T = 125°C

= 100µA

3.0

2.5

2.0

1.5

1.0

= 250uA

ID = 1.0mA

ID = 1.0A

-75 -50 -25

25 50 75 100 125 150 175

200

400

600

800

1000

T , Temperature ( °C )

di /dt (A/µs)

Fig. 17 - Typical Recovery Current vs. di_f/dt

Fig 16. Threshold Voltage vs. Temperature

800

I = 14A

I = 21A

700

600

500

400

300

200

100

= 100V

T = 25°C

T = 125°C

200

400

600

800

1000

200

400

600

800

1000

di /dt (A/µs)

Fig. 18 - Typical Recovery Current vs. di_f/dt

Fig. 19 - Typical Stored Charge vs. di_f/dt

1000

I = 21A

900

800

700

600

500

400

300

200

100

= 100V

T = 25°C

T = 125°C

200

400

600

800

1000

di /dt (A/µs)

Fig. 20 - Typical Stored Charge vs. di_f/dt

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