Datasheet > IRFB7437PBF

IRFB7437PBF

更新时间： 2024-09-21 17:15:27

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	466K
描述
种类:N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时）:100A;Vgs(th)(V):±20;漏源导通电阻:2mΩ@10V

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中文翻译

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数据手册

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IRFB7437PBF 数据手册

IRFB7437

UMW

40 V

N-Channel

MOSFET

Applications

•

Brushed Motor drive applications

BLDC Motor drive applications

Battery powered circuits

Half-bridge and full-bridge topologies

Synchronousrectifierapplications

Resonant mode power supplies

OR-ing and redundant power switches

DC/DC and AC/DC converters

DC/ACInverters

Benefits

•

V_DS(V) =40V

I_D=100A (V_GS= 10V)

R_DS(ON)<2.0mΩ (V _GS=10V)

•

_J= 25°C (unless otherwise specified)

Static @ T

Symbol

Conditions

Parameter

Min.

Typ.

Max.

Units

V_GS= 0V, I_D= 250μA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Reference to 25°C, I_D= 1mA

V_GS= 10V, I_D= 100A

ΔV_(BR)DSS/ΔT_J

R_DS(on)

0.029

1.5

V/°C

mΩ

2.0

V_GS= 6.0V, I_D= 50A

1.8

_DS= V_GS, I_D= 150μA

V_GS(th)

I_DSS

Gate Threshold Voltage

2.2

3.0

3.9

1.0

V_DS= 40V, V_GS= 0V

V_DS= 40V, V_GS= 0V, T_J= 125°C

Drain-to-Source Leakage Current

μA

150

100

-100

_GS= 20V

_GS= -20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

R_G

2.2

www.umw-ic.com

UTD Semiconductor Co.,Limited

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