是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.71 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 450 V | 最大漏极电流 (ID): | 8 A |
最大漏源导通电阻: | 0.85 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 32 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF841F | ETC |
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(188.09 k) | |
IRF841FI | STMICROELECTRONICS |
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N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
IRF841R | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220AB | |
IRF842 | FAIRCHILD |
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N-Channel Power MOSFETs, 8A, 450 V/500V | |
IRF842 | MOTOROLA |
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N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR | |
IRF842 | INFINEON |
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TRANSISTORS N-CHANNEL | |
IRF842-009 | INFINEON |
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Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF842-012PBF | INFINEON |
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Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF842FI | STMICROELECTRONICS |
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4A, 500V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET | |
IRF842R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-220AB |