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IRF841F PDF预览

IRF841F

更新时间: 2024-11-01 23:58:51
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
10页 190K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(188.09 k)

IRF841F 数据手册

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IRF840/FI  
IRF841/FI  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTORS  
TYPE  
IRF840  
IRF840FI  
VDSS  
RDS(on)  
ID  
500 V  
500 V  
< 0.85 Ω  
< 0.85 Ω  
8 A  
4.5 A  
IRF841  
IRF841FI  
450 V  
450 V  
< 0.85 Ω  
< 0.85 Ω  
8 A  
4.5 A  
TYPICAL RDS(on) = 0.74 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
3
3
2
2
REPETITIVE AVALANCHE DATA AT 100oC  
1
1
APPLICATIONS  
TO-220  
ISOWATT220  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
CHOPPER REGULATORS, CONVERTERS,  
MOTOR CONTROL, LIGHTING FOR  
INDUSTRIAL AND CONSUMER  
ENVIRONMENT  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
IRF  
Unit  
840  
500  
500  
841  
450  
450  
840FI  
841FI  
450  
VDS  
Drain-source Voltage (VGS = 0)  
500  
500  
V
V
VDGR Drain- gate Voltage (RGS = 20 k)  
450  
VGS  
ID  
Gate-source Voltage  
Drain Current (cont.) at Tc = 25 oC  
Drain Current (cont.) at Tc = 100 oC  
± 20  
V
8
8
4.5  
2.8  
32  
4.5  
2.8  
32  
A
ID  
5.1  
32  
5.1  
32  
A
I
DM() Drain Current (pulsed)  
A
Ptot  
Total Dissipation at Tc = 25 oC  
125  
1
40  
W
W/oC  
Derating Factor  
0.32  
2000  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
-65 to 150  
150  
oC  
oC  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
May 1993  

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