Datasheet > IRF8707

IRF8707

更新时间： 2024-09-28 11:12:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	258K
描述
30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF8707 数据手册

PD - 96118A

IRF8707PbF

HEXFET^®Power MOSFET

Applications

Control MOSFET of Sync-Buck

Converters used for Notebook

Processor Power

Control MOSFET for Isolated

DC-DC Converters in Networking

Systems

V_DSS

30V

R_DS(on)max

11.9m @V_GS= 10V

6.2nC

Benefits

Very Low Gate Charge

Very Low R_DS(on)at 4.5V V_GS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

20V V_GSMax. Gate Rating

100% tested for Rg

Lead-Free

Description

The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the

industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are

critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC

converters that power the latest generation of processors for notebook and Netcom applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

9.1

@T_A= 25°C

@T_A= 70°C

Power Dissipation

2.5

1.6

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

R_θJL

R_θJA

°C/W

–––

Notes through ꢀare on page 9

www.irf.com

10/24/07

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRF8707相关器件

型号	品牌	获取价格	描述	数据表
IRF8707GPBF	INFINEON	获取价格	Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
IRF8707GTRPBF	INFINEON	获取价格	Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
IRF8707PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF8707PBF-1	INFINEON	获取价格	Power Field-Effect Transistor
IRF8707TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
IRF8707TRPBF	INFINEON	获取价格	HEXFETÂ® Power MOSFET
IRF8714	INFINEON	获取价格	30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装
IRF8714GPBF	INFINEON	获取价格	Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
IRF8714GTRPBF	INFINEON	获取价格	Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
IRF8714PBF	INFINEON	获取价格	HEXFET Power MOSFET