IRF8513PBF

更新时间： 2024-11-02 05:39:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
11页	339K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IRF8513PBF 数据手册

PD - 96196

IRF8513PbF

HEXFET^®Power MOSFET

Applications

V_DSS

I_D

8.0A

11A

R_DS(on)max

15.5m @V_GS= 10V

12.7m @V_GS= 10V

l Dual SO-8 MOSFET for POL

Converters in Notebook Computers, Servers,

Graphics Cards, Game Consoles

and Set-Top Box

30V

Benefits

l Low Gate Charge and Low R_DS(on)

l Fully Characterized Avalanche Voltage

and Current

l 20V V_GSMax. Gate Rating

l 100% Tested for R_G

l Lead-Free (Qualified to 260°C Reflow)

l RoHS Compliant (Halogen Free)

SO-8

Description

The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard

SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation

including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make

this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook

and Netcom applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Q1 Max.

Q2 Max.

Units

V_DS

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

8.0

6.2

9.0

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.5

2.4

1.05

0.01

1.68

0.02

Linear Derating Factor

Operating Junction and

Storage Temperature Range

W/°C

°C

T_J

-55 to + 175

T_STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Q1 Max.

Q2 Max.

Units

R_θJL

R_θJA

°C/W

100

62.5

Junction-to-Ambient

Notes through ꢀ are on page 11

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

www.irf.com

11/05/08

12 3 4 5 6 7...11

中文翻译

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IRF8513PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF8513TRPBF	INFINEON	类似代替	HEXFET Power MOSFET

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