IRF830

更新时间： 2024-11-23 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管局域网
页数	文件大小	规格书
8页	136K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF830 数据手册

IRF830, SiHF830

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

500

Available

• Repetitive Avalanche Rated

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

1.5

RoHS*

Q_g(Max.) (nC)

5.0

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF830PbF

SiHF830-E3

IRF830

Lead (Pb)-free

SnPb

SiHF830

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

4.5

Continuous Drain Current

V_GSat 10 V

I_D

2.9

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.59

280

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

4.5

E_AR

7.4

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

3.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 24 mH, R_G= 25 Ω, I_AS= 4.5 A (see fig. 12).

c. I_SD≤ 4.5 A, dI/dt ≤ 75 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91063

S-81290-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF830相关器件

型号	品牌	获取价格	描述	数据表
IRF830/D	ETC	获取价格	Power Field Effect Transistor
IRF830-005	VISHAY	获取价格	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF83016	MOTOROLA	获取价格	4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF8301MPBF	INFINEON	获取价格	Ultra-low Package Inductance
IRF8301MPBF_15	INFINEON	获取价格	Ultra-low Package Inductance
IRF8301MTRPBF	INFINEON	获取价格	DirectFETPower MOSFET
IRF8302MPBF	INFINEON	获取价格	Dual Sided Cooling Compatible
IRF8302MPBF_15	INFINEON	获取价格	Dual Sided Cooling Compatible
IRF8302MTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Me
IRF8304MPBF	INFINEON	获取价格	Ultra Low Package Inductance