IRF820APBF

更新时间： 2024-11-23 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	182K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRF820APBF 数据手册

PD - 94978

SMPS MOSFET

IRF820APbF

HEXFET^®Power MOSFET

Applications

V_DSS

500V

R_DS(on) max

I_D

2.5A

l Switch Mode Power Supply (SMPS)

l Uninterruptable Power Supply

l High speed power switching

l Lead-Free

3.0Ω

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Effective C_OSSspecified (See AN 1001)

G D S

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

2.5

1.6

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.4

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

3.4

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Typical SMPS Topologies:

l Two transistor Forward

l Half Bridge and Full Bridge

Notes through ꢀare on page 8

www.irf.com

02/03/04

12 3 4 5 6 7 8

中文翻译

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与IRF820APBF相关器件

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IRF820AS	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)
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IRF820ASPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF820ASPBF	VISHAY	获取价格	Power MOSFET
IRF820ASTRL	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.5A I(D) \| TO-263AB
IRF820ASTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRF820ASTRR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.5A I(D) \| TO-263AB
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