生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 2.5 A |
最大漏源导通电阻: | 3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 40 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF820 | VISHAY |
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Power MOSFET |
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IRF820PBF | VISHAY |
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2SK2019-01 | FUJI |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF820R | RENESAS |
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TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2.5A I(D),TO-220AB |
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IRF820S | INFINEON |
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Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A) |
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IRF820S, SiHF820S, IRF820L, SiHF820L | VISHAY |
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Power MOSFET |
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IRF820SPBF | INFINEON |
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HEXFET㈢ Power MOSFET |
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IRF820SPBF | VISHAY |
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Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal |
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IRF820SR | FAIRCHILD |
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Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal |
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IRF820STRL | VISHAY |
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MOSFET N-CH 500V 2.5A D2PAK |
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IRF820STRR | VISHAY |
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MOSFET N-CH 500V 2.5A D2PAK |
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IRF820T | MOTOROLA |
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2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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IRF820U2 | MOTOROLA |
获取价格 |
2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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