是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SFM | 包装说明: | , |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.67 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 2 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 50 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF822-004 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-o | |
IRF822-005 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-o | |
IRF822FI | STMICROELECTRONICS |
获取价格 |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS | |
IRF822R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-220AB | |
IRF823 | FAIRCHILD |
获取价格 |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V | |
IRF823 | MOTOROLA |
获取价格 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS | |
IRF823 | SAMSUNG |
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N-CHANNEL POWER MOSFETS | |
IRF823R | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2A I(D),TO-220AB | |
IRF8252PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF8252PBF-1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |