Datasheet > IRF820STRR

IRF820STRR

更新时间： 2024-02-13 00:44:53

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	232K
描述
MOSFET N-CH 500V 2.5A D2PAK

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中文翻译

获取价格

数据手册
替代型号

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IRF820STRR 数据手册

IRF820S, SiHF820S, IRF820L, SiHF820L

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

V_DS(V)

_DS(on)()

Q_g(Max.) (nC)

500

V_GS= 10 V

3.0

Available

3.3

_gs(nC)

_gd(nC)

Available

Configuration

Single

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

D²PAK (TO-263)

I²PAK (TO-262)

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non-RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details.



DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK (TO-263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF820S-GE3

IRF820SPbF

D²PAK (TO-263)

SiHF820STRL-GE3 ^a

IRF820STRLPbF ^a

D²PAK (TO-263)

SiHF820STRR-GE3 ^a

IRF820STRRPbF ^a

I²PAK (TO-262)

SiHF820L-GE3

IRF820LPbF

Lead (Pb)-free and halogen-free

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

2.5

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

1.6

Pulsed Drain Current ^a

I_DM

8.0

Linear Derating Factor

0.40

0.025

210

W/°C

Linear Derating Factor (PCB mount) ^e

Single Pulse Avalanche Energy ^b

Avalanche Current ^a

E_AS

I_AR

2.5

Repetitive Avalanche Energy ^a

E_AR

5.0

Maximum Power Dissipation

_C= 25 °C

P_D

V/ns

°C

Maximum Power Dissipation (PCB mount) ^e

Peak Diode Recovery dV/dt ^c

T_A= 25 °C

3.1

dV/dt

3.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^d

T_J, T_stg

-55 to +150

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 60 mH, R_g= 25 , I_AS= 2.5 A (see fig. 12).

c. I_SD 2.5 A, dI/dt  50 A/μs, V_DD V_DS, T_J 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S15-1659-Rev. D, 20-Jul-15

Document Number: 91060

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

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IRF820STRR 替代型号

型号	品牌	替代类型	描述	数据表
IRF820STRL	VISHAY	完全替代	MOSFET N-CH 500V 2.5A D2PAK
IRF820SPBF	VISHAY	完全替代	Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal

与IRF820STRR相关器件

型号	品牌	获取价格	描述	数据表
IRF820T	MOTOROLA	获取价格	2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF820U2	MOTOROLA	获取价格	2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF820W	MOTOROLA	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRF821	MOTOROLA	获取价格	N-CHANNEL Enhancement-Mode Silicon Gate TMOS
IRF821	SAMSUNG	获取价格	N-CHANNEL POWER MOSFETS
IRF821	ROCHESTER	获取价格	2.5A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF821	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
IRF821-009	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRF821FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 2A I(D) \| TO-220AB
IRF821R	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2.5A I(D),TO-220AB

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