Datasheet > IRF830

IRF830

更新时间： 2024-11-26 05:39:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管场效应晶体管局域网
页数	文件大小	规格书
1页	115K
描述
N-channel mosfet transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF830 数据手册

MOSFET

INCHANGE

IRF830

N-channel mosfet transistor

Features

·With TO-220 package

·Simple drive requirements

·Fast switching

1 2 3

·V_DSS=500V; R_DS(ON)≤1.5Ω;I_D=4.5A

·1.gate 2.drain 3.source

Absolute Maximum Ratings Tc=25℃

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

Drain-source voltage (V_GS=0)

Gate-source voltage

RATING

500

UNIT

±20

4.5

Drain Current-continuous@ T_C=25℃

Total Dissipation@T_C=25℃

Max. Operating Junction temperature

Storage temperature

P_tot

100

T_j

150

℃

T_stg

-65~150

TO-220

Electrical Characteristics Tc=25℃

SYMBOL

V_(BR)DSS

V_GS(TH)

R_DS(ON)

I_GSS

PARAMETER

CONDITIONS

V_GS=0; I_D=0.25mA

V_DS= V_GS; I_D=0.25mA

MIN

500

MAX

UNIT

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-stage resistance V_GS=10V; I_D=2.7A

1.5

±100

1.0

V_GS=±20V;V_DS=0

V_DS=500V; V_GS=0

I_F=4.5A; V_GS=0

Gate source leakage current

Zero gate voltage drain current

Diode forward voltage

I_DSS

V_SD

1.6

中文翻译

下载PDF

与IRF830相关器件

型号	品牌	获取价格	描述	数据表
IRF830/D	ETC	获取价格	Power Field Effect Transistor
IRF830-005	VISHAY	获取价格	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF83016	MOTOROLA	获取价格	4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF8301MPBF	INFINEON	获取价格	Ultra-low Package Inductance
IRF8301MPBF_15	INFINEON	获取价格	Ultra-low Package Inductance
IRF8301MTRPBF	INFINEON	获取价格	DirectFETPower MOSFET
IRF8302MPBF	INFINEON	获取价格	Dual Sided Cooling Compatible
IRF8302MPBF_15	INFINEON	获取价格	Dual Sided Cooling Compatible
IRF8302MTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Me
IRF8304MPBF	INFINEON	获取价格	Ultra Low Package Inductance