型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF822-004 | INFINEON |
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Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-o | |
IRF822-005 | INFINEON |
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Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-o | |
IRF822FI | STMICROELECTRONICS |
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N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS | |
IRF822R | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-220AB | |
IRF823 | FAIRCHILD |
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N-Channel Power MOSFETs, 3.0 A, 450 V/500 V | |
IRF823 | MOTOROLA |
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N-CHANNEL Enhancement-Mode Silicon Gate TMOS | |
IRF823 | SAMSUNG |
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N-CHANNEL POWER MOSFETS | |
IRF823R | RENESAS |
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TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2A I(D),TO-220AB | |
IRF8252PBF | INFINEON |
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HEXFET Power MOSFET | |
IRF8252PBF-1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |