Datasheet > IRF8252PBF-1

IRF8252PBF-1

更新时间： 2024-01-12 14:23:53

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	211K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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IRF8252PBF-1 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82

IRF8252PBF-1 数据手册

IRF8252PbF-1

HEXFET^®Power MOSFET

V_DS

2.7

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

I_D

(@T_A= 25°C)

SO-8

Top View

Applications

Synchronous MOSFET for Notebook Processor Power

Synchronous Rectifier MOSFET for Isolated DC-DC Converters

Features

Benefits

Industry-standard pinout SO-8 Package

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF8252PbF-1

IRF8252TRPbF-1

IRF8252PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

±20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

200

2.5

1.6

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

R_θJL

R_θJA

°C/W

–––

Notes through ꢀare on page 9

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November 22, 2013

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