Datasheet > IRF820AS, SiHF820AS, IRF820AL, SiHF820AL

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL

更新时间： 2024-11-20 14:54:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	236K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL 数据手册

浏览型号IRF820AS, SiHF820AS, IRF820AL, SiHF820AL的Datasheet PDF文件第2页

浏览型号IRF820AS, SiHF820AS, IRF820AL, SiHF820AL的Datasheet PDF文件第3页

浏览型号IRF820AS, SiHF820AS, IRF820AL, SiHF820AL的Datasheet PDF文件第4页

浏览型号IRF820AS, SiHF820AS, IRF820AL, SiHF820AL的Datasheet PDF文件第5页

浏览型号IRF820AS, SiHF820AS, IRF820AL, SiHF820AL的Datasheet PDF文件第6页

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Low Gate Charge Q_gResults in Simple Drive

Requirement

D²PAK (TO-263)

I²PAK (TO-262)

• Improved Gate, Avalanche and Dynamic dV/dt

Available

Ruggedness

• Fully Characterized Capacitance and Avalanche

Voltage and Current

Available

• Effective C_ossspecified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

PRODUCT SUMMARY

V_DS(V)

500

R_DS(on)(Max.) (Ω)

V_GS= 10 V

3.0

TYPICAL SMPS TOPOLOGIES

Q_g(Max.) (nC)

4.3

8.5

• Two Transistor Forward

Q_gs(nC)

_gd(nC)

• Half Bridge and Full Bridge

Configuration

Single

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF820AS-GE3

IRF820ASPbF

I²PAK (TO-262)

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

SiHF820AL-GE3

IRF820ALPbF

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

2.5

1.6

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^{a, e}

I_DM

Linear Derating Factor

0.4

140

2.5

5.0

W/°C

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

Repetiitive Avalanche Energy^a

E_AS

I_AR

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^{c, e}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

dV/dt

T_J, T_stg

3.4

V/ns

- 55 to + 150

°C

for 10 s

300^d

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 45 mH, R_g= 25 Ω, I_AS= 2.5 A (see fig. 12).

c. I_SD≤ 2.5 A, dI/dt ≤ 270 A/μs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. Uses IRF820A, SiHF820A data and test conditions.

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

S21-0901-Rev. D, 30-Aug-2021

Document Number: 91058

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRF820AS, SiHF820AS, IRF820AL, SiHF820AL相关器件

型号	品牌	获取价格	描述	数据表
IRF820ASPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF820ASPBF	VISHAY	获取价格	Power MOSFET
IRF820ASTRL	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.5A I(D) \| TO-263AB
IRF820ASTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRF820ASTRR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.5A I(D) \| TO-263AB
IRF820ASTRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRF820B	FAIRCHILD	获取价格	500V N-Channel MOSFET
IRF820BJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Met
IRF820C	MOTOROLA	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRF820D1	MOTOROLA	获取价格	2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

与IRF820AS, SiHF820AS, IRF820AL, SiHF820AL相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL 数据手册

与IRF820AS, SiHF820AS, IRF820AL, SiHF820AL相关器件

与IRF820AS, SiHF820AS, IRF820AL, SiHF820AL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL 数据手册

与IRF820AS, SiHF820AS, IRF820AL, SiHF820AL相关器件

与IRF820AS, SiHF820AS, IRF820AL, SiHF820AL相关文章

您还可以找

您在本页遇到什么问题？