是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.64 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (ID): | 16 A | 最大漏源导通电阻: | 0.22 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 250 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 64 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN OVER NICKEL | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF643-002PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRF643-003PBF | INFINEON |
获取价格 |
16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET | |
IRF643-004 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRF643-004PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRF643-005PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRF643-006 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRF643-006PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRF643-009PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRF643-010PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRF643-011PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Met |