Datasheet > IRF644B-FP001

IRF644B-FP001

更新时间： 2023-09-03 20:31:49

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关脉冲晶体管
页数	文件大小	规格书
9页	1200K
描述
分立式 MOSFET

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技术参数
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IRF644B-FP001 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	LEAD FREE, TO-220, 3 PIN
Reach Compliance Code：	compliant	风险等级：	5.29
雪崩能效等级（Eas）：	480 mJ	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	250 V	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	56 A	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

IRF644B-FP001 数据手册

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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与IRF644B-FP001相关器件

型号	品牌	获取价格	描述	数据表
IRF644BJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Met
IRF644FPBF	INFINEON	获取价格	Power Field-Effect Transistor, 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF644FXPBF	INFINEON	获取价格	Power Field-Effect Transistor, 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRF644N	INFINEON	获取价格	Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
IRF644N	VISHAY	获取价格	Power MOSFET
IRF644NL	INFINEON	获取价格	Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
IRF644NL	VISHAY	获取价格	Power MOSFET
IRF644NLPBF	VISHAY	获取价格	Power MOSFET
IRF644NLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
IRF644NPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET

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