型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF60R217 | INFINEON |
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Power Field-Effect Transistor, 58A I(D), 60V, 0.0099ohm, 1-Element, N-Channel, Silicon, Me | |
IRF60SC241 | INFINEON |
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Infineon’s latest 60 V StrongIRFET??power MOS | |
IRF610 | SAMSUNG |
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Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Me | |
IRF610 | FAIRCHILD |
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N-Channel Power MOSFETs, 3.5A, 150-200V | |
IRF610 | VISHAY |
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Power MOSFET | |
IRF610 | INTERSIL |
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3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET | |
IRF610 | NJSEMI |
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Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB | |
IRF6100 | INFINEON |
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HEXFET Power MOSFET | |
IRF610-001 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
IRF610-006 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met |