IRF610B

更新时间： 2024-10-01 22:31:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	868K
描述
200V N-Channel MOSFET

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中文翻译

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数据手册
替代型号

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IRF610B 数据手册

IRF610B/IRFS610B

200V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for

uninterrupted power supply and motor control.

•

3.3A, 200V, R

= 1.5Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 7.2 nC)

Low Crss ( typical 6.8 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

TO-220

IRF Series

TO-220F

IRFS Series

D S

G D

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRF610B

IRFS610B

Units

Drain-Source Voltage

200

DSS

- Continuous (T = 25°C)

Drain Current

3.3

2.1

3.3 *

2.1 *

10 *

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

3.3

3.8

5.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.31

0.18

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

IRF610B

IRFS610B

5.71

Units

°C/W

Thermal Resistance, Junction-to-Case Max.

Thermal Resistance, Case-to-Sink Typ.

3.28

0.5

θJC

θCS

Thermal Resistance, Junction-to-Ambient Max.

62.5

θJA

Rev. A1, December 2002

12 3 4 5 6 7...10

中文翻译

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IRF610B 替代型号

型号	品牌	替代类型	描述	数据表
STP120NF10	STMICROELECTRONICS	功能相似	N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET
STP5NK100Z	STMICROELECTRONICS	功能相似	N-CHANNEL 1000V - 2.7W - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTM MOSFET
STP55NF06L	STMICROELECTRONICS	功能相似	N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PA

与IRF610B相关器件

型号	品牌	获取价格	描述	数据表
IRF610C	MOTOROLA	获取价格	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610CHP	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF610D1	MOTOROLA	获取价格	2.5 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF610F	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRF610FPBF	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRF610FX	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRF610L	MOTOROLA	获取价格	2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF610LPBF	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610N	MOTOROLA	获取价格	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET

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