生命周期: | Obsolete | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 雪崩能效等级(Eas): | 44 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 3.3 A | 最大漏源导通电阻: | 1.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 10 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF610B | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
IRF610C | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
IRF610CHP | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRF610D1 | MOTOROLA |
获取价格 |
2.5 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
IRF610F | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF610FPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF610FX | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF610L | MOTOROLA |
获取价格 |
2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
IRF610LPBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
IRF610N | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met |