IRF610

更新时间： 2024-11-20 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	594K
描述
Power MOSFET

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中文翻译

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数据手册

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IRF610 数据手册

IRF610, SiHF610

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

200

Available

• Repetitive Avalanche Rated

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

1.5

RoHS*

Q_g(Max.) (nC)

8.2

1.8

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

4.5

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF610PbF

SiHF610-E3

IRF610

Lead (Pb)-free

SnPb

SiHF610

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

200

V_GS

T_C= 25 °C

T_C=100°C

3.3

Continuous Drain Current

_GSat 10 V

I_D

2.1

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.29

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

3.3

E_AR

3.6

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

_C= 25 °C

P_D

5.0

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 8.8 mH, R_G= 25 Ω, I_AS= 3.3 A (see fig. 12).

c. I_SD≤ 3.3 A, dI/dt ≤ 70 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91023

S-81240-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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与IRF610相关器件

型号	品牌	获取价格	描述	数据表
IRF6100	INFINEON	获取价格	HEXFET Power MOSFET
IRF610-001	INFINEON	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-006	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-012	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-015	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-018PBF	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-019PBF	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-024	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-024PBF	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-029	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met

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