IRF6100PBF

更新时间： 2024-11-20 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体小信号场效应晶体管开关
页数	文件大小	规格书
8页	619K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRF6100PBF 数据手册

PD - 96012B

IRF6100PbF

HEXFET^®Power MOSFET

l Ultra Low R_DS(on)per Footprint Area

l Low Thermal Resistance

l P-Channel MOSFET

l One-third Footprint of SOT-23

l Super Low Profile (<.8mm)

l Available Tested on Tape & Reel

l Lead-Free

V_DSS

-20V

R_DS(on)max

0.065Ω@V_GS= -4.5V -5.1A

I_D

0.095Ω@V_GS= -2.5V -4.1A

Description

True chip-scale packaging is available from International

Rectifier. Through the use of advanced processing tech-

niques, and a unique packaging concept, extremely low

on-resistance and the highest power densities in the

industry have been made available for battery and load

managementapplications.Thesebenefits,combinedwith

the ruggedized device design , that International Rectifier

is well known for, provides the designer with an ex-

tremely efficient and reliable device.

FlipFET ISOMETRIC

The FlipFET™ package, is one-third the footprint of a

comparable SOT-23 package and has a profile of less

than .8mm. Combined with the low thermal resistance of

the die level device, this makes the FlipFET™ the best

device for application where printed circuit board space is

at a premium and in extremely thin application environ-

ments such as battery packs, cell phones and PCMCIA

cards.

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-20

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

±5.1

±3.5

±35

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.2

1.4

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

± 12

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Symbol

R_θJA

R_θJ-PCB

Parameter

Junction-to-Ambient

Junction-to-PCB mounted

Typ.

Max.

56.5

–––

Units

°C/W

www.irf.com

05/17/06

12 3 4 5 6 7 8

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