Datasheet > IRF60SC241

IRF60SC241

更新时间： 2024-11-21 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1055K
描述
Infineon’s latest 60 V StrongIRFET??power MOSFET devices are optimized for both high current and low RDS(on)?making them the ideal solution for high current battery powered applications.

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数据手册

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IRF60SC241 数据手册

IRF60SC241

MOSFET

D²-PAKꢀ7pin

StrongIRFETª

Features

•ꢀVeryꢀlowꢀR_DS(on)

•ꢀHighꢀcurrentꢀcarryingꢀcapability

•ꢀ175°Cꢀoperatingꢀtemperature

•ꢀOptimizedꢀforꢀbroadestꢀavailabilityꢀfromꢀdistributionꢀpartners

Benefits

•ꢀReducedꢀconductionꢀlosses

•ꢀIncreasedꢀpowerꢀdensity

•ꢀIncreasedꢀreliabilityꢀversusꢀ150°Cꢀratedꢀparts

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Drain

tab

Productꢀvalidation

Gate

Pin 1

QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard

Source

Pin 2-7

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

V_DS

R_DS(on),typ

0.95

1.3

mΩ

R_DS(on),max

I_{D(SiliconꢀLimited)}

I_{D(PackageꢀLimited)}

Q_G(0V..10V)

363

360

311

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IRF60SC241

PG-TO263-7

IRF60SC241

Final Data Sheet

Rev.ꢀ2.2,ꢀꢀ2020-08-10

12 3 4 5 6 7...11

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