Datasheet > IRF610

IRF610

更新时间： 2024-11-19 22:31:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	58K
描述
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET

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IRF610 数据手册

IRF610

Data Sheet

June 1999

File Number 1576.3

3.3A, 200V, 1.500 Ohm, N-Channel Power

MOSFET

Features

• 3.3A, 200V

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

• r

= 1.500Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17442.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRF610

TO-220AB

IRF610

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-190

12 3 4 5 6 7

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IRF610 替代型号

型号	品牌	替代类型	描述	数据表
SIHF610-E3	VISHAY	功能相似	Power MOSFET
IRF610	FAIRCHILD	功能相似	N-Channel Power MOSFETs, 3.5A, 150-200V

与IRF610相关器件

型号	品牌	获取价格	描述	数据表
IRF6100	INFINEON	获取价格	HEXFET Power MOSFET
IRF610-001	INFINEON	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-006	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-012	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-015	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-018PBF	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-019PBF	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-024	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-024PBF	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF610-029	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met