Datasheet > IRF100S201

IRF100S201

更新时间： 2024-11-20 21:18:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	617K
描述
Power Field-Effect Transistor

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中文翻译

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数据手册

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IRF100S201 数据手册

StrongIRFET™

IRF100B201

IRF100S201

HEXFET^®Power MOSFET

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

Battery powered circuits

V_DSS

100V

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

R_DS(on)typ.

max

3.5m

4.2m

I_{D (Silicon Limited)}

192A

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant, Halogen-Free

D²-Pak

IRF100S201

TO-220AB

IRF100B201

Gate

Drain

Source

Standard Pack

Form

Base part number

Package Type

Orderable Part Number

Quantity

IRF100B201

IRF100S201

TO-220

D²-Pak

Tube

IRF100B201

IRF100S201

Tape and Reel

800

200

160

120

= 115A

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

175

, Case Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 1. Typical On– Resistance vs. Gate Voltage

Fig 2. Maximum Drain Current vs. Case Temperature

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March 26, 2015

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