Datasheet > IPP04N03LBG_08

IPP04N03LBG_08

更新时间： 2024-11-20 11:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	275K
描述
OptiMOS2 Power-Transistor

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中文翻译

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数据手册

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IPP04N03LBG_08 数据手册

IPP04N03LB G

OptiMOS^®2 Power-Transistor

Product Summary

Features

V _DS

3.8

• Ideal for high-frequency dc/dc converters

• Qualified according to JEDEC¹⁾for target application

R _DS(on),max

I _D

mΩ

• N-channel - Logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

PG-TO220-3-1

• Superior thermal resistance

• 175 °C operating temperature

• dv /dt rated

• Pb-free lead plating; RoHS compliant

Type

Package

Marking

IPP04N03LB G

PG-TO220-3-1

04N03LB

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

T _C=25 °C³⁾

I _D,pulse

Pulsed drain current

320

270

E _AS

I _D=80 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=80 A, V _DS=20 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage⁴⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

107

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

Rev. 0.95

page 1

2008-05-06

12 3 4 5 6 7...9

中文翻译

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