Datasheet > IPP050N06LG

IPP050N06LG

更新时间： 2024-09-15 03:44:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	451K
描述
OptiMOS㈢ Power-Transistor

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中文翻译

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数据手册

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IPP050N06LG 数据手册

IPP050N06N G

IPB050N06N G

OptiMOS^®Power-Transistor

Product Summary

Features

V _DS

4.7

100

• For fast switching converters and sync. rectification

• N-channel enhancement - normal level

R _{DS(on),max SMDversion}

I _D

mΩ

• 175 °C operating temperature

• Avalanche rated

• Pb-free lead plating, RoHS compliant

IPP050N06L

IPB050N06L

Type

P-TO220-3-1

050N06L

P-TO263-3-2

050N06L

Package

Marking

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C¹⁾

I _D

Continuous drain current

100

400

810

T _C=100 °C

T _C=25 °C²⁾

I _D,pulse

Pulsed drain current

E _AS

I _D=100 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=100 A, V _DS=48 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V _GS

Gate source voltage

±20

P _tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾Current is limited by bondwire; with an R_thJC=0.5 the chip is able to carry 160A

²⁾See figure 3

Rev. 1.11

page 1

2006-07-06

12 3 4 5 6 7...10

中文翻译

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