Datasheet > IPP052N08N5

IPP052N08N5

更新时间： 2024-09-16 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	1847K
描述
OptiMOS? 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS? 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS? 5 80 V has an RDS(on) reduction of up to 43%.

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IPP052N08N5 技术参数

MOSFET

MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor

OptiMOS^TM

OptiMOS^ª5ꢀPower-Transistor,ꢀ80ꢀV

IPP052N08N5

DataꢀSheet

Rev.ꢀ2.0

Final

PowerꢀManagementꢀ&ꢀMultimarket

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
IPP052N08N5AKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 80V, 0.0052ohm, 1-Element, N-Channel, Silicon, Me
IPP052NE7N3 G	INFINEON	获取价格	75V OptiMOS?技术专注于同步整流应用。基于领先的80V技术，这些75V产品同时具
IPP052NE7N3G	ROCHESTER	获取价格	80A, 75V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
IPP052NE7N3G	INFINEON	获取价格	OptiMOS3 Power-Transistor
IPP052NE7N3GXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Me
IPP054NE8N	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor
IPP054NE8NG	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor
IPP054NE8NGHKSA2	INFINEON	获取价格	Power Field-Effect Transistor, 100A I(D), 85V, 0.0054ohm, 1-Element, N-Channel, Silicon, M
IPP055N03LG	INFINEON	获取价格	OptiMOS?3 Power-Transistor
IPP055N03LG_09	INFINEON	获取价格	OptiMOS3 Power-Transistor