是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-262AA | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.83 |
其他特性: | LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 60 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (Abs) (ID): | 30 A | 最大漏极电流 (ID): | 30 A |
最大漏源导通电阻: | 0.0139 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 46 W | 最大脉冲漏极电流 (IDM): | 210 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI16CN10NG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
IPI16CNE8NG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
IPI180N10N3G | INFINEON |
获取价格 |
OptiMOSTM3 Power-Transistor | |
IPI200N15N3G | INFINEON |
获取价格 |
OptiMOSâ¢3 Power-Transistor Features Excelle | |
IPI200N25N3G | INFINEON |
获取价格 |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | |
IPI22N03S4L-15 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI25N06S3-25 | INFINEON |
获取价格 |
OptiMOS㈢-T Power-Transistor | |
IPI25N06S3L-22 | INFINEON |
获取价格 |
OptiMOS㈢-T Power-Transistor | |
IPI26CN10NG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor | |
IPI26CNE8NG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor |