是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-262AA | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.74 |
雪崩能效等级(Eas): | 107 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 53 A |
最大漏极电流 (ID): | 53 A | 最大漏源导通电阻: | 0.0162 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 100 W |
最大脉冲漏极电流 (IDM): | 212 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | MATTE TIN | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI16CNE8NG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor |
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IPI180N10N3G | INFINEON |
获取价格 |
OptiMOSTM3 Power-Transistor |
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IPI200N15N3G | INFINEON |
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OptiMOSâ¢3 Power-Transistor Features Excelle |
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IPI200N25N3G | INFINEON |
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OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) |
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IPI22N03S4L-15 | INFINEON |
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OptiMOS-T2 Power-Transistor |
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IPI25N06S3-25 | INFINEON |
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OptiMOS㈢-T Power-Transistor |
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IPI25N06S3L-22 | INFINEON |
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OptiMOS㈢-T Power-Transistor |
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IPI26CN10NG | INFINEON |
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OptiMOS㈢2 Power-Transistor |
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IPI26CNE8NG | INFINEON |
获取价格 |
OptiMOS㈢2 Power-Transistor |
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IPI320N20N3G | INFINEON |
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OptiMOSTM3 Power-Transistor Features N-channel, normal level |
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