Datasheet > IPI12CN10NG

IPI12CN10NG

更新时间： 2024-01-07 18:11:48

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	627K
描述
OptiMOS㈢2 Power-Transistor

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中文翻译

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数据手册
替代型号

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IPI12CN10NG 数据手册

IPB12CN10N G IPD12CN10N G

IPI12CN10N G IPP12CN10N G

OptiMOS^®2 Power-Transistor

Product Summary

V _DS

Features

100

12.4

• N-channel, normal level

_DS(on),max(TO252)

mΩ

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

I _D

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

IPB12CN10N G

IPD12CN10N G

IPI12CN10N G

IPP12CN10N G

Type

PG-TO263-3

12CN10N

PG-TO252-3

12CN10N

PG-TO262-3

12CN10N

PG-TO220-3

12CN10N

Package

Marking

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

268

154

I _D=67 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=67 A, V _DS=80 V,

di /dt =100 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage³⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

125

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾see figure 3

=150°C and duty cycle D=0.01 for V_gs<-5V

jmax

Rev. 1.02

page 1

2006-06-02

12 3 4 5 6 7...12

中文翻译

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IPI12CN10NG 替代型号

型号	品牌	替代类型	描述	数据表
IPP126N10N3G	INFINEON	完全替代	OptiMOSTM3 Power-Transistor
IPI086N10N3G	INFINEON	类似代替	OptiMOS™3 Power-Transistor Features Excellent
IPI126N10N3G	INFINEON	功能相似	OptiMOSTM3 Power-Transistor

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