是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.62 |
其他特性: | ULTRA LOW RESISTANCE | 雪崩能效等级(Eas): | 1880 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 120 A | 最大漏源导通电阻: | 0.0023 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 480 A | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI120N04S4-01 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI120N04S4-02 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI120N04S402AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, M | |
IPI120N06S4-02 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI120N06S4-03 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPI120N06S403AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, M | |
IPI120N06S4-H1 | INFINEON |
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OptiMOS-T2 Power-Transistor | |
IPI120N08S4-03 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, M | |
IPI120N08S403AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, M | |
IPI120N08S4-04 | INFINEON |
获取价格 |
? 仿真/ SPICE-型号 |