Datasheet > IPI120N10S4-03

IPI120N10S4-03

更新时间： 2024-01-16 12:15:24

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	353K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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IPI120N10S4-03 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.82	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IPI120N10S4-03 数据手册

IPB120N10S4-03

IPI120N10S4-03, IPP120N10S4-03

OptiMOS^®-T2 Power-Transistor

Product Summary

V_DS

100

3.5

R_DS(on),max(SMD version)

I_D

120

Features

• N-channel - Normal Level - Enhancement mode

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

4N1003

IPB120N10S4-03

IPI120N10S4-03

IPP120N10S4-03

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C, V _GS=10V¹⁾

I _D

Continuous drain current

120

T _C=100°C, V _GS=10V²⁾

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25°C

480

770

120

±20

250

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=60A

I _AS

V _GS

P _tot

T _C=25°C

Power dissipation

T _j, T _stg

Operating and storage temperature

-55 ... +175

°C

Rev. 1.0

page 1

2014-06-30

12 3 4 5 6 7...9

中文翻译

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