5秒后页面跳转
IPI120N04S4-02 PDF预览

IPI120N04S4-02

更新时间: 2024-01-31 07:34:38
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 161K
描述
OptiMOS-T2 Power-Transistor

IPI120N04S4-02 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.64雪崩能效等级(Eas):480 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):120 A最大漏极电流 (ID):120 A
最大漏源导通电阻:0.0021 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):158 W最大脉冲漏极电流 (IDM):480 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPI120N04S4-02 数据手册

 浏览型号IPI120N04S4-02的Datasheet PDF文件第2页浏览型号IPI120N04S4-02的Datasheet PDF文件第3页浏览型号IPI120N04S4-02的Datasheet PDF文件第4页浏览型号IPI120N04S4-02的Datasheet PDF文件第5页浏览型号IPI120N04S4-02的Datasheet PDF文件第6页浏览型号IPI120N04S4-02的Datasheet PDF文件第7页 
IPB120N04S4-02  
IPI120N04S4-02, IPP120N04S4-02  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
40  
1.8  
120  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• AEC qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
4N0402  
4N0402  
4N0402  
IPB120N04S4-02  
IPI120N04S4-02  
IPP120N04S4-02  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
120  
120  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
I AS  
T C=25°C  
480  
480  
120  
±20  
158  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=60A  
mJ  
A
-
VGS  
Ptot  
-
V
T C=25°C  
Power dissipation  
W
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
°C  
Rev. 1.0  
page 1  
2010-04-06  

IPI120N04S4-02 替代型号

型号 品牌 替代类型 描述 数据表
IPI120N04S3-02 INFINEON

类似代替

OptiMOS-T Power-Transistor

与IPI120N04S4-02相关器件

型号 品牌 获取价格 描述 数据表
IPI120N04S402AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, M
IPI120N06S4-02 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPI120N06S4-03 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPI120N06S403AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, M
IPI120N06S4-H1 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPI120N08S4-03 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, M
IPI120N08S403AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, M
IPI120N08S4-04 INFINEON

获取价格

? 仿真/ SPICE-型号
IPI120N10S4-03 INFINEON

获取价格

Power Field-Effect Transistor
IPI120N10S4-05 INFINEON

获取价格

Power Field-Effect Transistor