型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPA057N06N3GXKSA1 | INFINEON |
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Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me | |
IPA057N08N3 G | INFINEON |
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OptiMOS? 系列是高效率解决方案的市场领导者,适用于发电(例如太阳能微逆变器)、电源 | |
IPA057N08N3G | INFINEON |
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OptiMOS(TM)3 Power-Transistor | |
IPA057N08N3GXKSA1 | INFINEON |
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Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me | |
IPA060N06N | INFINEON |
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OptiMOSTM Power-Transistor, 60 V | |
IPA060N06N_16 | INFINEON |
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OptiMOSTM Power-Transistor, 60 V | |
IPA060N06NM5S | INFINEON |
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This OptiMOS? 5 power MOSFET 60V in TO-220 FullPAK (IPA060N06NM5S) is designed to meet the | |
IPA060N06NXKSA1 | INFINEON |
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Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Met | |
IPA0618 | RFE |
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THRU-HOLE INDUCTORS IPA Series & IPR Series | |
IPA075N15N3 G | INFINEON |
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与次优竞品相比,150V OptiMOS? R DS(on) 降低 40%,品质因数 (F |