5秒后页面跳转
IPA100N08N3G PDF预览

IPA100N08N3G

更新时间: 2024-11-06 11:08:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 281K
描述
OptiMOS(TM)3 Power-Transistor

IPA100N08N3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.8Is Samacsys:N
雪崩能效等级(Eas):110 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:80 V
最大漏极电流 (Abs) (ID):40 A最大漏极电流 (ID):40 A
最大漏源导通电阻:0.01 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):35 W
最大脉冲漏极电流 (IDM):160 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPA100N08N3G 数据手册

 浏览型号IPA100N08N3G的Datasheet PDF文件第2页浏览型号IPA100N08N3G的Datasheet PDF文件第3页浏览型号IPA100N08N3G的Datasheet PDF文件第4页浏览型号IPA100N08N3G的Datasheet PDF文件第5页浏览型号IPA100N08N3G的Datasheet PDF文件第6页浏览型号IPA100N08N3G的Datasheet PDF文件第7页 
IPA100N08N3 G  
OptiMOS(TM)3 Power-Transistor  
Product Summary  
Features  
V DS  
80  
10  
40  
V
• Ideal for high frequency switching and sync. rec.  
• Optimized technology for DC/DC converters  
• Excellent gate charge x R DS(on) product (FOM)  
R DS(on),max  
I D  
m  
A
• N-channel, normal level  
• 100% avalanche tested  
• Pb-free plating; RoHS compliant  
• Qualified according to JEDEC1) for target applications  
Type  
IPA100N08N3 G  
Package  
Marking  
PG-TO220-FP  
100N08N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
40  
30  
A
T C=100 °C  
Pulsed drain current3)  
I D,pulse  
E AS  
T C=25 °C  
160  
Avalanche energy, single pulse4)  
I D=40 A, R GS=25 Ω  
110  
mJ  
V
V GS  
Gate source voltage  
±20  
P tot  
T C=25 °C  
Power dissipation  
35  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1)J-STD20 and JESD22  
2) Current is limited by package; with an RthJC=1.5 K/W in a standard TO-220 package the chip is able  
to carry 72A.  
3) See figure 3 for more detailed information  
4) See figure 13 for more detailed information  
Rev. 2.0  
page 1  
2008-11-21  

与IPA100N08N3G相关器件

型号 品牌 获取价格 描述 数据表
IPA100N08N3GXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 40A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IPA1020 RFE

获取价格

THRU-HOLE INDUCTORS IPA Series & IPR Series
IPA105N15N3G INFINEON

获取价格

OptiMOS3 Power-Transistor
IPA105N15N3GXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 37A I(D), 150V, 0.0105ohm, 1-Element, N-Channel, Silicon, M
IPA1226 RFE

获取价格

THRU-HOLE INDUCTORS IPA Series & IPR Series
IPA126N10N3G INFINEON

获取价格

OptiMOSTM3 Power-Transistor
IPA126N10N3GXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 35A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, M
IPA126N10NM3S INFINEON

获取价格

Infineon’s OptiMOS? 3 power MOSFET 100V is de
IPA-15805-10 ETC

获取价格

Preamp, Non-Audio
IPA-15805-11 ETC

获取价格

Preamp, Non-Audio