是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.8 | Is Samacsys: | N |
雪崩能效等级(Eas): | 110 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 80 V |
最大漏极电流 (Abs) (ID): | 40 A | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.01 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 35 W |
最大脉冲漏极电流 (IDM): | 160 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPA100N08N3GXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta | |
IPA1020 | RFE |
获取价格 |
THRU-HOLE INDUCTORS IPA Series & IPR Series | |
IPA105N15N3G | INFINEON |
获取价格 |
OptiMOS3 Power-Transistor | |
IPA105N15N3GXKSA1 | INFINEON |
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Power Field-Effect Transistor, 37A I(D), 150V, 0.0105ohm, 1-Element, N-Channel, Silicon, M | |
IPA1226 | RFE |
获取价格 |
THRU-HOLE INDUCTORS IPA Series & IPR Series | |
IPA126N10N3G | INFINEON |
获取价格 |
OptiMOSTM3 Power-Transistor | |
IPA126N10N3GXKSA1 | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, M | |
IPA126N10NM3S | INFINEON |
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Infineon’s OptiMOS? 3 power MOSFET 100V is de | |
IPA-15805-10 | ETC |
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Preamp, Non-Audio | |
IPA-15805-11 | ETC |
获取价格 |
Preamp, Non-Audio |