Datasheet > IPA060N06N

IPA060N06N

更新时间： 2024-11-22 01:20:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	1667K
描述
OptiMOSTM Power-Transistor, 60 V

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中文翻译

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数据手册

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IPA060N06N 数据手册

IPA060N06N

MOSFET

OptiMOS^TMꢀPower-Transistor,ꢀ60ꢀV

TO-220-FP

Features

•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀrec.

•ꢀ100%ꢀavalancheꢀtested

•ꢀSuperiorꢀthermalꢀresistance

•ꢀN-channel

•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC¹⁾ꢀꢀforꢀtargetꢀapplications

•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Drain

Pin 2

Parameter

Value

Unit

V_DS

Gate

Pin 1

R_DS(on),max

I_D

6.0

mΩ

Source

Pin 3

Q_OSS

Q_G(0V..10V)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPA060N06N

PG-TO220-FP

060N06N

¹⁾J-STD20 and JESD22

Final Data Sheet

Rev.ꢀ2.2,ꢀꢀ2016-08-10

12 3 4 5 6 7...10

中文翻译

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