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IPA093N06N3GXKSA1 PDF预览

IPA093N06N3GXKSA1

更新时间: 2024-11-18 21:13:31
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 484K
描述
Power Field-Effect Transistor, 43A I(D), 60V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

IPA093N06N3GXKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.65雪崩能效等级(Eas):43 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):43 A
最大漏源导通电阻:0.0093 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):172 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPA093N06N3GXKSA1 数据手册

 浏览型号IPA093N06N3GXKSA1的Datasheet PDF文件第2页浏览型号IPA093N06N3GXKSA1的Datasheet PDF文件第3页浏览型号IPA093N06N3GXKSA1的Datasheet PDF文件第4页浏览型号IPA093N06N3GXKSA1的Datasheet PDF文件第5页浏览型号IPA093N06N3GXKSA1的Datasheet PDF文件第6页浏览型号IPA093N06N3GXKSA1的Datasheet PDF文件第7页 
IPA093N06N3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
Features  
VDS  
60  
9.3  
43  
V
• Ideal for high frequency switching and sync. rec.  
• Optimized technology for DC/DC converters  
• Excellent gate charge x R DS(on) product (FOM)  
RDS(on),max  
ID  
mW  
A
• N-channel, normal level  
• 100% avalanche tested  
• Pb-free plating; RoHS compliant  
• Qualified according to JEDEC1) for target applications  
Type  
IPA093N06N3 G  
Package  
Marking  
PG-TO220 FP  
093N06N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
Continuous drain current  
43  
31  
A
Pulsed drain current2)  
I D,pulse  
E AS  
172  
Avalanche energy, single pulse3)  
Gate source voltage  
I D=50 A, R GS=25 W  
43  
mJ  
V
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
33  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1)J-STD20 and JESD22  
2) See figure 3 for more detailed information  
3) See figure 13 for more detailed information  
Rev. 2.1  
page 1  
2017-01-12  

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