Datasheet > IPA083N10NM5S

IPA083N10NM5S

更新时间： 2024-11-19 14:56:51

品牌	Logo	应用领域
英飞凌 - INFINEON		电视
页数	文件大小	规格书
10页	1057K
描述
Infineon’s power MOSFET 100V in TO-220 FullPAK package (IPA083N10NM5S) meets the requirements for improved system efficiency and at the same time reduces system costs. Infineon’s OptiMOS? power MOSFET features low RDS(on) of 8.3mOhm improving efficiency. In addition, with its increased power density the new TO-220 FullPAK portfolio extension is the excellent solution for synchronous rectification. It is optimized for TV, desktop, adapter and gaming applications.

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IPA083N10NM5S 数据手册

IPA083N10NM5S

MOSFET

OptiMOS^TMꢀ5ꢀPower-Transistor,ꢀ100ꢀV

PG-TOꢀ220ꢀFP

Features

•ꢀIdealꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsync.ꢀrec.

•ꢀExcellentꢀgateꢀchargeꢀxꢀR_DS(on)ꢀproductꢀ(FOM)

•ꢀVeryꢀlowꢀon-resistanceꢀꢀR_DS(on)

•ꢀN-channel,ꢀnormalꢀlevel

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard

Drain

Pin 2

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Gate

Pin 1

Parameter

Value

100

8.3

Unit

Source

Pin 3

V_DS

R_DS(on),max

I_D

mΩ

Q_oss

Q_G(0V..10V)

Typeꢀ/ꢀOrderingꢀCode

Package

PG-TO 220 FullPAK

Marking

RelatedꢀLinks

IPA083N10NM5S

083N105S

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2019-09-02

12 3 4 5 6 7...10

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