Datasheet > IKW30N60T

IKW30N60T

更新时间： 2024-02-23 02:46:05

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管双极性晶体管
页数	文件大小	规格书
13页	398K
描述
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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中文翻译

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技术参数
数据手册
替代型号

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IKW30N60T 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	7.83	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IKW30N60T 数据手册

IKW30N60T

TrenchStop Series

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

•

Very low V_CE(sat)1.5 V (typ.)

Maximum Junction Temperature 175 °C

Short circuit withstand time – 5µs

Designed for :

- Frequency Converters

- Uninterruptible Power Supply

•

Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

P-TO-247-3-1

(TO-220AC)

- low V_CE(sat)

•

Positive temperature coefficient in V_CE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel EmCon HE diode

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Marking Code Package

Ordering Code

IKW30N60T

600V

30A

1.5V

K30T60

TO-247 Q67040S4717

175°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current, limited by T_jmax

T_C= 25°C

V_CE

I_C

600

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_Cpuls

I_F

Turn off safe operating area (V_CE≤ 600V, T_j≤ 175°C)

Diode forward current, limited by T_jmax

T_C= 25°C

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

I_Fpuls

V_GE

t_SC

±20

Short circuit withstand time¹⁾

µs

_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

P_tot

T_j

T_stg

187

Power dissipation T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-40...+175

-55...+175

260

°C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.1 Dev-04

Power Semiconductors

12 3 4 5 6 7...13

中文翻译

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IKW30N60T 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50WPBF	INFINEON	类似代替	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50UPBF	INFINEON	类似代替	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
IRG4PC50UDPBF	INFINEON	类似代替	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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