Datasheet > IKW40N120CS7

IKW40N120CS7

更新时间： 2023-09-03 20:30:11

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IKW40N120CS7 数据手册

IKW40N120CS7

™

Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology

™

Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology copacked with sof and fast recovery Emitter

Controlled 7 diode

Features

• V_CE=1200 V

• I_C=40 A

• IGBT co-packed with full current, sof and low Qrr diode

• Low saturation voltage V_CE(sat)= 2.0 V at T_vj=175 °C

• Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...)

• Short circuit ruggedness 8 µsec

• Wide range of dv/dt controllability

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Potential applications

• Industrial Drives

• Industrial Power Supplies

• Solar Inverters

Product validation

• Product Validation: Qualified for industrial applications according to the relevant tests of

JEDEC47/20/22

Description

Type

Package

Marking

IKW40N120CS7

PG-TO247-3

K40MCS7

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

1.00

2021-03-17

12 3 4 5 6 7...16

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型号	品牌	获取价格	描述	数据表
IKW40N120H3	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLA
IKW40N120H3FKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLA
IKW40N120T2	INFINEON	获取价格
IKW40N120T2FKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, GREEN, P
IKW40N120T2XK	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, GREEN, P
IKW40N60DTP	INFINEON	获取价格	IGBT TRENCHSTOP™ Perf.
IKW40N60DTPXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 67A I(C), 600V V(BR)CES, N-Channel, TO-247,
IKW40N60H3	INFINEON	获取价格	IGBT HighSpeed 3
IKW40N60H3FKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLAS
IKW40N65ES5	INFINEON	获取价格	high Speed soft switching IGBT with full current rated RAPID 1 diode