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IGB50N65S5ATMA1 PDF预览

IGB50N65S5ATMA1

更新时间: 2024-11-24 19:59:55
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
14页 1307K
描述
Insulated Gate Bipolar Transistor,

IGB50N65S5ATMA1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:26 weeks
风险等级:1.42湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IGB50N65S5ATMA1 数据手册

 浏览型号IGB50N65S5ATMA1的Datasheet PDF文件第2页浏览型号IGB50N65S5ATMA1的Datasheet PDF文件第3页浏览型号IGB50N65S5ATMA1的Datasheet PDF文件第4页浏览型号IGB50N65S5ATMA1的Datasheet PDF文件第5页浏览型号IGB50N65S5ATMA1的Datasheet PDF文件第6页浏览型号IGB50N65S5ATMA1的Datasheet PDF文件第7页 
IGB50N65S5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
TRENCHSTOPTMꢀ5ꢀhighꢀspeedꢀsoftꢀswitchingꢀIGBT  
C
E
FeaturesꢀandꢀBenefits:  
HighꢀspeedꢀS5ꢀtechnologyꢀoffering  
•ꢀHighꢀspeedꢀsmoothꢀswitchingꢀdeviceꢀforꢀhardꢀ&ꢀsoftꢀswitching  
•ꢀVeryꢀLowꢀVCEsat,ꢀ1.35Vꢀatꢀnominalꢀcurrent  
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs  
•ꢀ650Vꢀbreakdownꢀvoltage  
G
•ꢀLowꢀQG  
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  
http://www.infineon.com/igbt/  
C
PotentialꢀApplications:  
•ꢀEnergyꢀGeneration  
ꢀꢀꢀ-ꢀSolarꢀStringꢀInverter  
ꢀꢀꢀ-ꢀSolarꢀMicroꢀInverter  
•ꢀIndustrialꢀPowerꢀSupplies  
ꢀꢀꢀ-ꢀIndustrialꢀSMPS  
ꢀꢀꢀ-ꢀIndustrialꢀUPS  
G
•ꢀMetalꢀTreatment  
ꢀꢀꢀ-ꢀWelding  
E
•ꢀEnergyꢀDistribution  
ꢀꢀꢀ-ꢀEnergyꢀStorage  
•ꢀInfrastructureꢀ–ꢀCharge  
ꢀꢀꢀ-ꢀCharger  
ProductꢀValidation:  
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests  
ofꢀJEDEC47/20/22  
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
1.35V 175°C  
Marking  
G50ES5  
Package  
IGB50N65S5  
650V  
50A  
PG-TO263-3  
Datasheet  
www.infineon.com  
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument  
Vꢀ2.2  
2018-01-11  

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我们的产品组合包括不同的先进IGBT功率模块产品系列,它们拥有不同的电路结构、芯片配置和电