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IGBT-PT-600V PDF预览

IGBT-PT-600V

更新时间： 2024-11-25 14:54:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 双极性晶体管
页数 文件大小 规格书
6页 240K
描述
IGBT products from Microchip provide high-quality solutions for awide range of high-voltage and hi

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中文翻译

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IGBT-PT-600V 数据手册

 浏览型号IGBT-PT-600V的Datasheet PDF文件第2页浏览型号IGBT-PT-600V的Datasheet PDF文件第3页浏览型号IGBT-PT-600V的Datasheet PDF文件第4页浏览型号IGBT-PT-600V的Datasheet PDF文件第5页浏览型号IGBT-PT-600V的Datasheet PDF文件第6页 
APT102GA60B2  
APT102GA60L  
600V  
APT102GA60B2  
High Speed PT IGBT  
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved  
through leading technology silicon design and lifetime control processes. A reduced Eoff  
-
VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low  
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short  
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of  
the poly-silicone gate structure help control di/dt during switching, resulting in low EMI,  
even when switching at high frequency.  
APT102GA60L  
Single die IGBT  
FEATURES  
TYPICAL APPLICATIONS  
• Fast switching with low EMI  
• Very Low Eoff for maximum efficiency  
• Ultra low Cres for improved noise immunity  
• Low conduction loss  
• ZVS phase shifted and other full bridge  
• Half bridge  
• High power PFC boost  
• Welding  
• Low gate charge  
• UPS, solar, and other inverters  
• High frequency, high efficiency industrial  
• Increased intrinsic gate resistance for low EMI  
• RoHS compliant  
Absolute Maximum Ratings  
Symbol Parameter  
Ratings  
Unit  
Collector Emitter Voltage  
600  
V
Vces  
IC1  
Continuous Collector Current @ TC = 25°C 1  
Continuous Collector Current @ TC = 100°C  
Pulsed Collector Current 2  
183  
102  
A
IC2  
ICM  
307  
VGE  
Gate-Emitter Voltage 3  
±30  
V
PD  
Total Power Dissipation @ TC = 25°C  
Switching Safe Operating Area @ TJ = 150°C  
Operating and Storage Junction Temperature Range  
780  
W
SSOA  
TJ, TSTG  
TL  
307A @ 600V  
-55 to 150  
°C  
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds  
300  
Static Characteristics  
Symbol Parameter  
T = 25°C unless otherwise specified  
J
Test Conditions  
Min  
Typ  
Max  
Unit  
VBR(CES)  
Collector-Emitter Breakdown Voltage  
VGE = 0V, IC = 250μA  
600  
TJ = 25°C  
TJ = 125°C  
2.0  
1.9  
4.5  
2.5  
VGE = 15V,  
IC = 62A  
V
VCE(on)  
VGE(th)  
ICES  
Collector-Emitter On Voltage  
Gate Emitter Threshold Voltage  
Zero Gate Voltage Collector Current  
Gate-Emitter Leakage Current  
VGE =VCE , IC = 2.5mA  
3
6
TJ = 25°C  
TJ = 125°C  
1000  
5000  
±100  
VCE = 600V,  
VGE = 0V  
μA  
IGES  
VGS = ±30V  
nA  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
-
Max  
0.16  
-
Unit  
°C/W  
g
RθJC  
WT  
Junction to Case Thermal Resistance  
Package Weight  
-
-
5.9  
Torque  
Mounting Torque (TO-247 Package), 4-40 or M3 screw  
in·lbf  
10  
Microsemi Website - http://www.microsemi.com  
123456

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