Datasheet > IGC100T65T8RM

IGC100T65T8RM

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
8页	99K
描述
TRENCHSTOP? IGBT 结合独特 TRENCHSTOP? 和场终止技术，为行业树立新标准。

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IGC100T65T8RM 数据手册

IGC100T65T8RM

IGBT3 Chip Medium Power

Features

• V_CES= 650 V

• I_Cn= 200 A

• 650 V trench & field stop technology

• High short circuit capability, self limiting short circuit current

• Positive temperature coeﬀicient

• Easy paralleling

Potential applications

• Drives

Product validation

• Technology qualified for industrial applications. Ready for validation in industrial applications

according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22

Description

• Recommended for power modules

Type

Die size

Delivery form

IGC100T65T8RM

9.73 mm x 10.23 mm

Sawn on foil

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.00

2023-04-28

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