Datasheet > IGBT-NPT-650V

IGBT-NPT-650V

更新时间： 2024-11-25 14:54:19

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	183K
描述
The Ultra Fast NPT - IGBT? family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses

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IGBT-NPT-650V 数据手册

APT45GR65B_S

APT45GR65B

APT45GR65S

650V, 45A, V_CE(on)= 1.9V Typical

Ultra Fast NPT - IGBT^®

(B)

The Ultra Fast 650V NPT-IGBT^®family of products is the newest generation of IGBTs

optimized for outstanding ruggedness and best trade-off between conduction and

switching losses.

D³PA K

(S)

Features

• Low Saturation Voltage

• Low Tail Current

• Short Circuit Withstand Rated

• High Frequency Switching

• Ultra Low Leakage Current

• RoHS Compliant

Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for

applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power

supplies (UPS).

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise speciﬁed.

Ratings

Unit

V_ces

Collector Emitter Voltage

650

V_GE

I_C1

Gate-Emitter Voltage

±30

118

Continuous Collector Current @ T_C= 25°C

Continuous Collector Current @ T_C= 110°C

I_C2

I_CM

Pulsed Collector Current

224

SCWT

P_D

Short Circuit Withstand Time: V_CE= 325V, V_GE= 15V, T_C=125°C

Total Power Dissipation @ T_C= 25°C

μs

543

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

-55 to 150

300

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter

Min

650

3.5

Typ

Max

Unit

V_(BR)CES

V_GE(TH)

Collector-Emitter Breakdown Voltage (V_GE= 0V, I_C= 250uA)

Gate Threshold Voltage (V_CE= V_GE, I_C= 1.0mA, T_j= 25°C)

5.0

6.5

2.4

Volts

Collector-Emitter On Voltage (V_GE= 15V, I_C= 45A, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 45A, T_j= 125°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 90A, T_j= 25°C)

1.9

2.4

2.6

V_CE(ON)

Collector Cut-off Current (V_CE= 650V, V_GE= 0V, T_j= 25°C)

250

I_CES

I_GES

ꢀA

Collector Cut-off Current (V_CE= 650V, V_GE= 0V, T_j= 125°C)

100

Gate-Emitter Leakage Current (V_GE= ±20V)

±250

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4 5 6

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与IGBT-NPT-650V相关器件

型号	品牌	获取价格	描述	数据表
IGBT-PT-1200V	MICROCHIP	获取价格	IGBT products from Microchip provide high-quality solutions for awide range of high-voltag
IGBT-PT-600V	MICROCHIP	获取价格	IGBT products from Microchip provide high-quality solutions for awide range of high-voltag
IGBT-PT-900V	MICROCHIP	获取价格	IGBT products from Microchip provide high-quality solutions for awide range of high-voltag
IGBT模块-英飞凌(Infineon)官网	INFINEON	获取价格	我们的产品组合包括不同的先进IGBT功率模块产品系列，它们拥有不同的电路结构、芯片配置和电
IGC03R60D	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 1.73 X 1.60 MM, DIE-2
IGC03R60DE	INFINEON	获取价格	Insulated Gate Bipolar Transistor
IGC03R60DEX1SA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor
IGC03R60DEX1SA2	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2
IGC04R60D	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 1.98 X 1.85 MM, DIE-2
IGC04R60DE	INFINEON	获取价格	Insulated Gate Bipolar Transistor

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